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Semiconductor Material and Device Characterization

字体: 小 中 大 | 打印 发表于: 2008-4-14 10:49    作者: hisap-nano2    来源: 红樱桃化学化工网

Semiconductor Material and Device Characterization





By Dieter K. Schroder

Publisher:   Wiley-IEEE Press
Number Of Pages:   800
Publication Date:   2006-01-30
Sales Rank:   211190
ISBN / ASIN:   0471739065
EAN:   9780471739067
Binding:   Hardcover
Manufacturer:   Wiley-IEEE Press
Studio:   Wiley-IEEE Press
Average Rating:   5


This Third Edition updates a landmark text with the latest findings

The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:

Updated and revised figures and examples reflecting the most current data and information
260 new references offering access to the latest research and discussions in specialized topics
New problems and review questions at the end of each chapter to test readers' understanding of the material
In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added:

Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.
Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.
Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.


Review:

Essential text

This is an essential text for engineers, scientists, and graduate students working in the semiconductor field. It contains a thorough review of all major electrical, optical, and physical characterization methods that are commonly used. Descriptions of techniques are generally conceptually oriented, clearly stated, and do not rely excessively on equations. In addition, many useful figures are included to help explain concepts when introduced. Up to date references are included for essentially every technique mentioned.




Review:

Great reference

Schroder has compiled an extensive and very nearly complete guide to modern characterization techniques that apply mostly to semiconductors and solid state devices, but also to techniques used in general materials analysis. We used this text in a graduate level course in EE and found it easy to read through and concise for use as a quick reference. Well worth the money.




Review:

Semiconductor Material and Device Characterization

This book offers an outstanding review of various techniques of semiconductor device processing. It is the type of book that is an invaluable reference to the device engineer. It's breadth is outstanding.pass: gigapedia.org



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最新回复

  • xf0931 (2008-4-14 16:30:39)


    hao
    hao
    好

  • mildmild (2008-4-15 01:59:03)

    Shalom! and thanks!
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